| Being the raw materials of the woven-glass
PTFE copper-clad subsrtate,the woven-glass PTFE
is made up of non-alkali;woven-glass varnished
with the dispersed PTFE emulsion by way of diying,baking
and sintering processes.It is a kind of heat resisting,insulation,and
low loss microwave material with good electrical
performances,non-adhesive and high-temperature
abilities.It is suitable to electronic,electrical
machinery,aviation,textile,chemical and food industries.It
can be also used in microwave circuit devices
as the separating layer for multi-layer printed-circuit
boards. |
| 1.Types: |
| a.F4B-N Ant adhesive Woven-glass
PTFE |
| b.F4B-J Insulation Woven-glass
PTFE |
| c.F4B-T Air Permeable
Woven-glass PTFE |
| 2.Technical
Specifications: |
| a.Exterior Looks:Surface with well
paleness and emulsion dispersed homogeneously
without cracks and mechanical scars. |
| b.Dimensions:A(length)=1～50m B(width)=900mm～1000mm
|
| c.Thickness and Tolerance: |
| Type
|
Guards
against sticks uses F4B-N |
Insulation
F4B-J |
The
ventilation guards against
sticks the varnished cloth F4B-T |
Thicknessδ(mm) |
0.08 |
0.10 |
0.15 |
0.40 |
0.1 |
0.15 |
0.24 |
0.04 |
0.07 |
| Tolerance(mm) |
±0.01 |
±0.02 |
±0.03 |
±0.04 |
±0.05 |
±0.01 |
±0.02 |
±0.004 |
±0.005 |
|
| Mechanical,Physical,Chemical
and Electrical Properties: |
|
No. |
Item |
Test Conditions |
Unit |
Technical Specifications |
| 1 |
Tonsil
Strength |
Pulling
Force Machin |
Kg/cm² |
1000 |
| 2 |
Donating
Temperature |
In Back
Oven |
℃ |
250℃
long-term operation 300℃
operation with interruption |
| 3 |
Chemical
Temperature |
Immersed
in Acid Sal Alkali Liquid |
|
All being
inertial |
| 4 |
Surface
Resisant Coefficient |
Under
Atmospheric Temperature |
Ω |
≥10¹² |
| 5 |
Bullk
Resistant Coefficient |
Under
Atmospheric Temperature |
Ω.cm |
≥10¹³Ωcm |
| 6 |
Break
down Voltage |
δ=0.8 |
KV |
≥0.6 |
| |
|
δ=0.1 |
KV |
≥0.8 |
| |
|
δ=0.15 |
KV |
≥1.1 |
| |
|
δ=0.20 |
KV |
≥1.3 |
| |
|
δ=0.40 |
KV |
≥1.5 |
| 7 |
Dialectical
Constant |
1GHz |
εr |
2.7±0.1 |
| 8 |
Dialectical
Loss Tangent |
1GHz |
tgδ |
≤2～5×10-4 |
|
